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 Power Transistors
2SB1470
Silicon PNP triple diffusion planar type darlington
Unit: mm
(10.0) (6.0) (2.0) (4.0)
For power amplification Complementary to 2SD2222 Features
* Optimum for 120 W HiFi output * High forward current transfer ratio hFE * Low collector-emitter saturation voltage VCE(sat)
26.00.5
20.00.5 3.30.2
5.00.3 (3.0)
(3.0)
(1.5)
(1.5) 2.00.3 3.00.3 1.00.2 0.60.2 5.450.3 (1.5) 2.70.3
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -160 -160 -5 -8 -15 150 3.5 150 -55 to +150 C C Unit V V V A A W B
1 2 10.90.5
20.00.5 (2.5) Solder Dip
3
1: Base 2: Collector 3: Emitter TOP-3L-A1 Package
Internal Connection
C
E
Electrical Characteristics TC = 25C 3C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Symbol VCEO ICBO ICEO IEBO hFE1 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time
*
Conditions IC = -30 mA, IB = 0 VCB = -160 V, IE = 0 VCE = -160 V, IB = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 A VCE = -5 V, IC = -7 A IC = -7 A, IB = -7 mA IC = -7 A, IB = -7 mA VCE = -10 V, IC = - 0.5 A, f = 1 MHz IC = -7 A, IB1 = -7 mA, IB2 = 7 mA VCC = -50 V
Min -160
Typ
Max -100 -100 -100
Unit V A A A
1 000 3 500 20 000 -3 -3 20 1.0 1.5 1.2
VCE(sat) VBE(sat) fT ton tstg tf
V V MHz s s s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE2 Q S P
3 500 to 10 000 5 000 to 15 000 7 000 to 20 000
(2.0)
Publication date: March 2003
SJD00076BED
1
2SB1470
PC Ta
200
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
-8 -100
TC=25C IB=-1.0mA
VCE(sat) IC
IC/IB=1000
Collector power dissipation PC (W)
160 (1) 120
Collector current IC (A)
(1)TC=Ta (2)With a 100x100x2mm Al heat sink (3)Without heat sink (PC=3.5W)
-6
-0.9mA -0.8mA -0.7mA
-10
-4
-0.6mA -0.5mA
-1
TC=25C 25C 125C
80
40 (2) 40 80 120 160
-2
-0.4mA -0.3mA
- 0.1
(3) 0 0
0
-0.2mA
0
-4
-8
-12
-16
- 0.01 - 0.1
-1
-10
-100
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
-100
IC/IB=1000
hFE IC
VCE=-5V
Cob VCB
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
IE=0 f=1MHz TC=25C
105
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
-10
104
25C
103
TC=-25C 25C -1 125C
TC=125C
103
-25C
102
- 0.1
102
10
- 0.01 - 0.1
-1
-10
-100
10
- 0.1
-1
-10
1 - 0.1
-1
-10
-100
Collector current IC (A)
Collector current IC (A)
Collector-base voltage VCB (V)
ton , tstg , tf IC
Turn-on time ton , Storage time tstg , Fall time tf (s)
100
Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (-IB1=IB2) VCC=-50V TC=25C tstg tf
Safe operation area
-100
Non repetitive pulse TC=25C ICP
Collector current IC (A)
10
-10
IC t=10ms DC t=1ms
1
ton
-1
0.1
- 0.1
0.01
0
-2
-4
-6
-8
-10
- 0.01 -1
-10
-100
-1 000
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00076BED
2SB1470
Rth t
104
Note: Rth was measured at Ta=25C and under naturalconvection. (1)PT=10Vx0.3A(3W) and without heat sink (2)PT=10Vx1.0A(10W) and with a 100x100x2mm Al heat sink
Thermal resistance Rth (C/W)
103
102 (1) 10 (2)
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
SJD00076BED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL


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